• Lower LCOE (Levelized Cost Of Energy), reduced BOS (Balance Of System) cost,
shorter payback time
• Lower guaranteed rst year and annual degradation • Minimized micro-cracks with innovative non-destructive cutting technology
• Ensured PID resistance through cell process and module material control
• Resistant to harsh environments such as salt, ammonia, sand, high temperature
and high humidity areas
• Mechanical performance up to 5400 Pa positive load and 2400 Pa negative load• Excellent IAM (Incident Angle Modi er) and low irradiation performance,
validated by 3rd party certi cations
• The unique design provides optimized energy production under inter-row
shading conditions
• Designed for compatibility with existing mainstream system components
• Higher return on Investment• Large area cells based on 210mm silicon wafers and 1/3-cut cell technology
• Up to 21.4% module eciency with high density interconnect technology
• Multi-busbar technology for better light trapping eect, lower series resistance
and improved current collection